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by Yuan, F and Zhang, ZG and Wang, JC and Pan, LY and Xu, J and Lai, CS
NANOSCALE RESEARCH LETTERS, ISSN 1931-7573, 08/2014, Volume 9, Issue 1, pp. 452 - 452
The total ionizing dose (TID) effects of Co-60 gamma ray radiation on the resistive random access memory (RRAM... 
gamma ray radiation | TAOX | Total ionizing dose (TID) effects | PHYSICS, APPLIED | Filament | Radiation-induced holes | Hybrid filament model | DISPLACEMENT DAMAGE | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | RRAM | HARDNESS
Journal Article
Nanoscale Research Letters, ISSN 1931-7573, 12/2014, Volume 9, Issue 1, pp. 1 - 6
Journal Article
Sensors & Actuators: A. Physical, ISSN 0924-4247, 04/2015, Volume 225, pp. 119 - 127
.... In particular the sensitivity, hysteresis, output offset voltage and input resistance are discussed when the sensors are submitted to a total irradiation dose of 43krad with 36krad/h dose rate... 
Radiation immunity | Current sensor | Total ionizing dose | Magnetic tunnel junction | Space applications | INSTRUMENTS & INSTRUMENTATION | ENGINEERING, ELECTRICAL & ELECTRONIC | Analysis | Sensors | Power converters | Actuators | Electric potential | Voltage | Irradiation | Tunnel junctions | Dosage
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 01/2014, Volume 29, Issue 1, p. 15010
This paper studies the total ionizing dose (TID) and single event effect (SEE) in quasi-SOI nMOSFETs for the first time... 
worst case | single event effect (SEE) | quasi-SOI device | total ionizing dose (TID) | TRANSISTOR | MOSFET | PHYSICS, CONDENSED MATTER | TECHNOLOGIES | UPSET | MATERIALS SCIENCE, MULTIDISCIPLINARY | CANDIDATE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal Article
Chinese Physics B, ISSN 1674-1056, 12/2018, Volume 27, Issue 12, p. 128501
The influence of characteristics' measurement sequence on total ionizing dose effect in partially-depleted SOI nMOSFET is comprehensively studied... 
measurement sequence | total ionizing dose (TID) | silicon-on-insulator (SOI) | tunneling effect | TID RADIATION | ELECTRON | PHYSICS, MULTIDISCIPLINARY | BURIED OXIDE | GENERATION | UNIBOND | STRESS
Journal Article
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2018, Volume 65, Issue 3, pp. 808 - 819
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 01/2018, Volume 65, Issue 1, pp. 101 - 110
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 01/2018, Volume 65, Issue 1, pp. 84 - 91
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 01/2017, Volume 64, Issue 1, pp. 45 - 53
Journal Article
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, ISSN 0168-9002, 05/2014, Volume 745, pp. 128 - 132
The total ionizing dose (TID) radiation effects of partially-depleted (PD) silicon-on-insulator (SOI... 
Total ionizing dose (TID) | Short channel effect | Silicon-on-insulator (SOI)
Journal Article
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