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electrostatic discharge (75) 75
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Microelectronics Reliability, ISSN 0026-2714, 09/2017, Volume 76-77, pp. 97 - 101
Latent defects were provoked in SMD capacitors by short TLP current pulses. Simultaneously the transient evolution of the device's charge was extracted to generate its Q(V... 
Transmission line pulsing | Defect generation | Electrical overstress | EOS | TLP | Transient characterisation | Dielectric breakdown | Latent defects | SMD capacitors | Latent failure | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | ENGINEERING, ELECTRICAL & ELECTRONIC | Circuit components | Electronic components industry | Capacitors | Analysis
Journal Article
中国物理B:英文版, ISSN 1674-1056, 2016, Volume 25, Issue 12, pp. 507 - 513
.... The theoretical studies are verified by the transmission-line-pulsing (TLP) test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor (CMOS) process... 
结构测试 | 静电放电 | 互补金属氧化物半导体 | 传输线脉冲 | 触发电压 | 放电行为 | 可控硅整流器 | 二极管 | mathematical modeling | transmissionline-pulsing (TLP) | diode-triggered silicon controlled rectifier (DTSCR) | electrostatic discharge (ESD) | transmission-line-pulsing (TLP) | PHYSICS, MULTIDISCIPLINARY | ESD PROTECTION
Journal Article
Journal of Semiconductors, ISSN 1674-4926, 01/2010, Volume 31, Issue 1, p. 014003
...Home Search Collections Journals About Contact us My IOPscience Analysis of trigger behavior of high voltage LDMOS under TLP and VFTLP stress This article... 
Transmission line pulsing | Very fast transmission line pulsing | Lateral doublediffused metal-oxide-semiconductor transistor | Electrostatic discharge
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 09/2012, Volume 33, Issue 9, pp. 1252 - 1254
GaAs high-electron-mobility transistors (HEMTs) have been widely used for radio-frequency (RF) applications due to the excellent material properties. One of... 
Schottky diodes | GaAs pseudomorphic high-electron-mobility transistor (pHEMT) | transmission-line pulsing (TLP) systems | PHEMTs | Gallium arsenide | Schottky barriers | Logic gates | Electrostatic discharge (ESD) | Electrostatic discharges | InGaP Schottky layer | Stress | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Science China Information Sciences, ISSN 1674-733X, 12/2016, Volume 59, Issue 12, pp. 1 - 9
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2018, Volume 65, Issue 7, pp. 2948 - 2956
Journal Article
by Zhang, LZ and Wang, Y and He, YD
IEICE TRANSACTIONS ON ELECTRONICS, ISSN 1745-1353, 05/2020, Volume E103C, Issue 5, pp. 274 - 278
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2016, Volume 63, Issue 8, pp. 3205 - 3212
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 09/2011, Volume 32, Issue 9, pp. 1200 - 1202
Journal Article
by Nidhi, K and Ker, MD and Lin, T and Lee, JH
IEEE TRANSACTIONS ON ELECTRON DEVICES, ISSN 0018-9383, 07/2018, Volume 65, Issue 7, pp. 2948 - 2956
The safe-operating-area (SOA) of large array device (LAD) is one of the most important factors affecting the device reliability. In this paper, the improvement... 
safe-operating-area (SOA) | ESD ROBUSTNESS | Electrical-SOA (E-SOA) | PHYSICS, APPLIED | transmission line pulsing (TLP) | large array device (LAD) | SOA | LAYOUT | thermal-SOA (T-SOA) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2018, Volume 65, Issue 7, pp. 2948 - 2956
The safe-operating-area (SOA) of large array device (LAD) is one of the most important factors affecting the device reliability. In this paper, the improvement... 
safe-operating-area (SOA) | MOSFET | Voltage measurement | Electrical-SOA (E-SOA) | transmission line pulsing (TLP) | Current measurement | large array device (LAD) | Layout | Logic gates | Transmission line measurements | thermal-SOA (T-SOA) | Stress
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2016, Volume 37, Issue 11, pp. 1477 - 1480
Thermal runaway is one of the main causes of semiconductor device failure under electrostatic discharge (ESD) stresses. An experimental method to investigate... 
Temperature measurement | Thermal expansion | Temperature | transmission line pulsing (TLP) | Heating | thermal failure | Electrostatic discharge (ESD) | Electrostatic discharges | Stress | Thermal stresses | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 12/2015, Volume 62, Issue 12, pp. 4128 - 4134
Journal Article
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