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IEEE Electron Device Letters, ISSN 0741-3106, 12/2016, Volume 37, Issue 12, pp. 1617 - 1620
Ultra-thin-barrier (UTB) AlGaN/GaN heterostructure is utilized for fabrication of normally-OFF GaN metal- insulator-semiconductor high-electron-mobility... 
ultra-thin-barrier AlGaN/GaN heterostructure | LPCVD-SINx passivation | HEMTs | Logic gates | Normally-OFF | GaN MIS-HEMTs | Wide band gap semiconductors | MODFETs | Gallium nitride | Aluminum gallium nitride | Passivation | TRANSISTOR | MOBILITY | ENGINEERING, ELECTRICAL & ELECTRONIC | MIS (semiconductors) | Gallium nitrides | Aluminum gallium nitrides
Journal Article
APPLIED SCIENCES-BASEL, ISSN 2076-3417, 08/2019, Volume 9, Issue 15, p. 3054
In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is... 
VOLTAGE | PHYSICS, APPLIED | GaN | HEMT | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | local charge compensation trench | CHEMISTRY, MULTIDISCIPLINARY | ultra-thin barrier | Ion implantation | Silicon wafers | Silicon nitride | Etching | Aluminum gallium nitrides | Transistors | Optimization | Design optimization
Journal Article
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