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2004, Physics and astronomy online library., ISBN 9783540210498, Volume 75., xvii, 499
Book
1999, The Electrochemical Society series., ISBN 0471574813, xviii, 297
Book
2010, 3rd ed., ISBN 9780071476232, xx, 426
Book
Applied Physics Express, ISSN 1882-0778, 08/2016, Volume 9, Issue 8, p. 81302
In this study, the results of direct wafer bonding of SiC-SiC at room temperature by standard surface-activated bonding (SAB) and modified SAB with a... 
NEMS | PHYSICS, APPLIED | MEMS | INTERFACE | LAYER | SILICON-WAFERS
Journal Article
Journal of Micromechanics and Microengineering, ISSN 0960-1317, 08/2014, Volume 24, Issue 8, pp. 84002 - 8
Metal thermocompression bonding is a hermetic wafer-level packaging technology that facilitates vertical integration and shrinks the area used for device... 
gold | Au-Au bonding | thermocompression | Au-Si | wafer-level | Gold | Frames | Eutectic reactions | Bonding strength | Laminates | Devices | Sealing | Bonding
Journal Article
ECS Transactions, ISSN 1938-5862, 2016, Volume 75, Issue 9, pp. 255 - 264
Conference Proceeding
Journal of Photopolymer Science and Technology, ISSN 0914-9244, 2014, Volume 27, Issue 2, pp. 173 - 176
There can be two kinds of de-bonding options in the aspect of the releasing interface, one is carrier release and the other is device wafer release.... 
wafer bonding | silicone | polyimide | temporary bonding | MEMS | de-bonding | 3D stacking | Wafer bonding | Polyimide | De-bonding | Silicone | Temporary bonding | POLYMER SCIENCE
Journal Article
Applied Surface Science, ISSN 0169-4332, 01/2019, Volume 465, pp. 591 - 595
In this study, a de-bondable wafer bonding method for silicon carbide (SiC) that can sustain rapid thermal annealing (RTA) at ∼1273 K has been realized. Two... 
Wafer bonding | Rapid thermal annealing | De-bonding | Precipitated carbon | Thin SiC device | Bonding interface | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | GRAPHENE | CHEMISTRY, PHYSICAL | DIODE | SURFACE | MEMS | MATERIALS SCIENCE, COATINGS & FILMS | Annealing | Silicon | Silicon carbide | Precipitation (Meteorology) | Analysis | Production processes
Journal Article
Scientific Reports, ISSN 2045-2322, 2012, Volume 2, Issue 1, p. 349
Monolithic integration of III-V compound semiconductors on silicon is highly sought after for high-speed, low-power-consumption silicon photonics and low-cost,... 
ROOM-TEMPERATURE | WAFER | SOLAR-CELLS | MICRODISK LASERS | MULTIDISCIPLINARY SCIENCES | SILICON | INP | COMPOUND SEMICONDUCTOR | GAAS | OPTICAL INTERCONNECTS | Integration | Silicon | Photovoltaic cells | Quantum dots | Lasers
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 04/2016, Volume 55, Issue 4, p. 4
A modified surface activated bonding (SAB) with Fe-Si multi-nanolayers is expected to achieve the wafer bonding of SiC to various materials. However, Fe... 
PHYSICS, APPLIED | CARBIDE | LAYER | SILICON-WAFERS | Annealing | Silicon carbide | Wafers | Surface chemistry | Bonding strength | Silicon | Nanostructure | Bonding
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 03/2013, Volume 113, Issue 9, p. 94905
Reducing the temperature needed for high strength bonding which was and is driven by the need to reduce effects of coefficient of thermal expansion mismatch,... 
OXIDATION | CONTACT | PHYSICS, APPLIED | MODEL | OXYGEN PLASMA | SIO2 | Integrated circuits | Silicon compounds | Thermal properties | Usage | Optical properties | Electron spectroscopy | Semiconductor wafers | Semiconductor chips
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 03/2015, Volume 54, Issue 3, pp. 30214 - 1-030214-5
4H-SiC wafer bonding has been achieved by the modified surface activated bonding (SAB) method without any chemical-clean treatment and high temperature... 
ROOM-TEMPERATURE | LITHIUM-NIOBATE | PHYSICS, APPLIED | Voids | Activated | Annealing | Silicon carbide | Wafers | Surface chemistry | Bonding | Tensile strength
Journal Article
Journal of Microelectromechanical Systems, ISSN 1057-7157, 04/2017, Volume 26, Issue 2, pp. 440 - 447
We present a varifocal mirror integrated with a comb-drive scanner (varifocal scanner) fabricated by using a wafer bonding technology. An Au-Au... 
Wafer bonding | Varifocal mirror | Resonant frequency | scanner | Silicon | Mirrors | Bonding | Surface treatment | micro-optoelectromechanical systems (MOEMS) | GOLD | MICROMIRROR | DESIGN | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | MIRROR | ENGINEERING, ELECTRICAL & ELECTRONIC | wafer bonding | INSTRUMENTS & INSTRUMENTATION | MEMS
Journal Article
Sensors and Actuators. Part A, Physical, ISSN 0924-4247, 10/2018, Volume 281, p. 222
We studied low temperature (<250 °C) transfer of 8 in. full sized thin Si wafer layer on the SiO2/Si substrate without any wafer flip up/down and subsequent... 
Thin films | Thickness | Nitrogen plasma | Silicon wafers | Low temperature physics | Silicon substrates | Bonding strength | Contact angle | Substrates | Silicon dioxide
Journal Article
IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, 07/2014, Volume 20, Issue 4, pp. 350 - 358
By co-integrating optics and electronics on the same chip, high-functionality, high-performance and highly integrated devices can be fabricated with a... 
wafer bonding | InP on Si bonding | Metallization | integration | Silicon | Microelectronics | Copper | Copper bonding | Bonding | silicon photonic | Photonics | QUANTUM SCIENCE & TECHNOLOGY | PHYSICS, APPLIED | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC | Wafers | Chip formation | Electronics | Strategy | Devices | Quantum electronics
Journal Article
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