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The Journal of Physical Chemistry C, ISSN 1932-7447, 03/2011, Volume 115, Issue 8, pp. 3203 - 3211
Isolated nanoparticles of the wide band gap II−VI semiconductors CdS and ZnS were produced by ultrafast pulsed laser deposition using pulses of ≈300 fs at two... 
C: Nanops and Nanostructures | CADMIUM-SULFIDE | MATERIALS SCIENCE, MULTIDISCIPLINARY | HIGH-TEMPERATURE | PULSED-LASER | OPTICAL-PROPERTIES | CHEMISTRY, PHYSICAL | ZNS FILMS | NANOSCIENCE & NANOTECHNOLOGY | CDS THIN-FILMS | ZINC-SULFIDE NANOCRYSTALLITES | TIO2 FILMS | NANOPARTICLES | FEMTOSECOND
Journal Article
Solid State Electronics, ISSN 0038-1101, 05/2019, Volume 155, pp. 65 - 75
Journal Article
Journal of Physics: Conference Series, ISSN 1742-6588, 10/2016, Volume 745, Issue 3, p. 32102
Conference Proceeding
ACS Applied Materials & Interfaces, ISSN 1944-8244, 08/2016, Volume 8, Issue 30, pp. 19187 - 19191
At an ultrathin 5 nm, we report a new high-mobility tin oxide (SnO2) metal-oxide-semiconductor field-effect transistor (MOSFET) exhibiting extremely high... 
field-effect mobility | wide energy band gap | SnO | high temperature | transistor | ROOM-TEMPERATURE | ELECTRON-MOBILITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | GATE | MODEL | INDUCED DRAIN LEAKAGE | INVERSION | OXIDE-SEMICONDUCTOR | MOSFETS | LAYERS | SnO2 | SCATTERING
Journal Article
2009, The Cambridge RF and microwave engineering series, ISBN 052188991X, Volume 9780521889919, xiii, 266
This comprehensive, applications-oriented survey of Electromagnetic Band Gap (EBG) engineering explains the theory, analysis, and design of EBG structures. It... 
Wide gap semiconductors | Design and construction | Antennas (Electronics) | Electronics & communications engineering
Book
ACTA PHYSICA POLONICA A, ISSN 0587-4246, 12/2019, Volume 136, Issue 6, pp. 916 - 939
The paper addresses the role of ambient elements (H, C, N and O) in the wide-bandgap semiconductor compounds. Their prevalence in the atmosphere imposes... 
atmospheric elements | NITROGEN ION-IMPLANTATION | ELECTRICAL CHARACTERIZATION | HYDROGEN INCORPORATION | CHEMICAL-VAPOR-DEPOSITION | PHYSICS, MULTIDISCIPLINARY | ZNO THIN-FILMS | OPTICAL-PROPERTIES | wide bang-gap semiconductors | MG-DOPED GAN | SILICON-CARBIDE | GALLIUM NITRIDE | SIMS | IMPURITY INCORPORATION
Journal Article
Journal of the American Chemical Society, ISSN 0002-7863, 1900, Volume 137, Issue 21, pp. 6897 - 6905
Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D... 
AUGMENTED-WAVE METHOD | MONOLAYER GRAPHENE | GERMANIUM | CHEMICAL-VAPOR-DEPOSITION | HETEROSTRUCTURES | ATOMIC LAYERS | HIGH-QUALITY | CHEMISTRY, MULTIDISCIPLINARY | FIELD-EFFECT TRANSISTORS | ELECTRONICS | INITIO MOLECULAR-DYNAMICS | Boron nitride | Chemical properties | Hybridization | Research | Graphene
Journal Article
Journal of Chemical Physics, ISSN 0021-9606, 02/2009, Volume 130, Issue 7, pp. 074103 - 074103-3
Journal Article
Journal of Inorganic and Organometallic Polymers and Materials, ISSN 1574-1443, 3/2017, Volume 27, Issue 2, pp. 436 - 445
Materials obtained by immobilization of nickel and iron complexes on the surface of n-type titanium dioxide and p-type copper iodide have interesting... 
Polymer Sciences | Metal complex photosensitizers | Chemistry | Optoelectronics | Copper iodide | Semiconducting materials | Inorganic Chemistry | Titanium dioxide | Organic Chemistry | OXIDATION | POLYMER SCIENCE | Metal complex | MECHANISMS | photosensitizers | DYE | NANOPARTICLES | REDUCTION | SENSITIZATION | OPTOELECTRONIC SWITCHES | SURFACE | HYDROGEN-PRODUCTION | NANOCOMPOSITE
Journal Article
IEEE International Reliability Physics Symposium Proceedings, ISSN 1541-7026, 05/2018, Volume 2018-, pp. 3B.21 - 3B.28
Conference Proceeding
Materials, ISSN 1996-1944, 12/2018, Volume 11, Issue 12, p. 2531
In this work, efforts were made to prepare a thermostable die-attach structure which includes stable sintered microporous Ag and multi-layer surface... 
Die attachment | Wide band-gap semiconductor | Sinter joining | wide band-gap semiconductor | sinter joining | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | die attachment | HIGH-TEMPERATURE | RELIABILITY
Journal Article
Materials Science Forum, ISSN 0255-5476, 05/2016, Volume 858, pp. 797 - 802
The attributes and benefits of wide-bandgap (WBG) semiconductors are rapidly becoming known, as their use in power electronics applications continues to gain... 
Cost of SiC | Fabless foundry | Renewable energy | GaN | PowerAmerica | SiC | Workforce development | Wide band gap | Costs | Acceptance | Government agencies | Silicon carbide | Semiconductors | Electronics | Markets | Devices
Journal Article
Physica B: Physics of Condensed Matter, ISSN 0921-4526, 12/2009, Volume 404, Issue 23-24, pp. 4999 - 5001
The mechanical strengths and dislocation activities in wide band-gap semiconductors SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures are summarized. From... 
Dislocation mobility | Mechanical stability | Wide band-gap semiconductors | PHYSICS, CONDENSED MATTER | TEMPERATURE | YIELD | III-V COMPOUNDS | HARDNESS | DEFORMATION | Semiconductors | Hardness | Activation energy
Journal Article
Solid State Electronics, ISSN 0038-1101, 2004, Volume 48, Issue 9, pp. 1555 - 1562
The theoretical limit of a lateral wide band-gap semiconductor (WBS) power device was estimated for SiC, GaN and diamond. The lateral WBS device realizes... 
Power device | Diamond | Lateral FET | GaN | Wide band-gap semiconductor | wide band-gap semiconductor | PHYSICS, CONDENSED MATTER | diamond | PHYSICS, APPLIED | FIELD-EFFECT-TRANSISTOR | HEMT | lateral FET | power device | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Chemical Physics, ISSN 0021-9606, 02/2012, Volume 136, Issue 7, pp. 074103 - 074103-8
A generalized solid-state nudged elastic band (G-SSNEB) method is presented for determining reaction pathways of solid-solid transformations involving both... 
elasticity | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | OMEGA-MARTENSITIC-TRANSFORMATION | solid-state phase transformations | cadmium compounds | TITANIUM | nucleation | II-VI semiconductors | MINIMUM ENERGY PATHS | density functional theory | crystal structure | SADDLE-POINTS | DYNAMICS | deformation | wide band gap semiconductors
Journal Article
The Journal of Physical Chemistry C, ISSN 1932-7447, 08/2016, Volume 120, Issue 33, pp. 18887 - 18894
Nanocrystalline Zn2SnO4 powders doped with Eu3+ ions were synthesized via a mechanochemical solid-state reaction method followed by postannealing in air at... 
EU3 | STATES | PHOTOLUMINESCENCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOCRYSTALS | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CRYSTAL | BULK | RAMAN-SCATTERING | PHOSPHORS | BILBAO CRYSTALLOGRAPHIC SERVER | OXIDES | doping | INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY | nanoparticles | analysis
Journal Article
physica status solidi (b), ISSN 0370-1972, 01/2020, Volume 257, Issue 1, p. n/a
The relative stability and energy of formation of monoclinic and corundum structures, which are, respectively, the lowest energy phases of Ga2O3 and Al2O3, are... 
alloys | Ga2O3 | wide band gap semiconductors
Journal Article
Separation and Purification Technology, ISSN 1383-5866, 12/2019, Volume 228, p. 115771
Strontium titanate (SrTiO ) with wide band gap, is only active under UV light irradiation and not under visible light. On the other hand, occupies about 3–5%... 
Strontium titanate | Photocatalytic activity | Reduced graphene oxide | Mechanism | DYES | RHODAMINE-B | PERFORMANCE | HYDROTHERMAL SYNTHESIS | ENGINEERING, CHEMICAL | NANOPARTICLES | DEGRADATION | NANOTUBES | FABRICATION | WATER
Journal Article