Articles

Search Articles

Advanced search
Help

Catalogue

Articles

Databases

X
Search Filters
Format Format
Format Format
X
Sort by Item Count (A-Z)
Filter by Count
Journal Article (3760) 3760
Conference Proceeding (859) 859
Publication (298) 298
Book / eBook (101) 101
Government Document (40) 40
Book Chapter (37) 37
Dissertation (30) 30
Newspaper Article (23) 23
Book Review (9) 9
Web Resource (5) 5
Magazine Article (4) 4
Newsletter (1) 1
Paper (1) 1
Trade Publication Article (1) 1
more...
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
wide band gap semiconductors (3193) 3193
physics, applied (2008) 2008
iii-v semiconductors (934) 934
aluminum gallium nitride (844) 844
ii-vi semiconductors (827) 827
gallium compounds (823) 823
zinc compounds (764) 764
engineering, electrical & electronic (710) 710
gallium nitride (633) 633
hemts (605) 605
materials science, multidisciplinary (592) 592
photoluminescence (503) 503
logic gates (480) 480
gan (474) 474
semiconductors (464) 464
physics, condensed matter (400) 400
silicon (375) 375
semiconductor growth (365) 365
nanoscience & nanotechnology (358) 358
modfets (357) 357
semiconductor thin films (353) 353
indium compounds (341) 341
aluminium compounds (324) 324
electric properties (322) 322
silicon carbide (314) 314
analysis (292) 292
materials science (284) 284
gallium nitrides (279) 279
silicon compounds (274) 274
films (266) 266
growth (262) 262
halbleiter mit grosser energielücke (262) 262
light emitting diodes (258) 258
optical properties (253) 253
nanowires (236) 236
semiconductor materials (230) 230
high electron mobility transistors (227) 227
annealing (224) 224
aluminum gallium nitrides (223) 223
semiconductor doping (223) 223
thin-films (223) 223
usage (217) 217
nanoparticles (216) 216
zinc oxide (215) 215
x-ray diffraction (214) 214
devices (212) 212
nanostructured materials (212) 212
semiconductor devices (211) 211
substrates (207) 207
chemistry, physical (204) 204
thin films (202) 202
semiconductor epitaxial layers (195) 195
optical-properties (194) 194
temperature (193) 193
energy gap (172) 172
wide-gap-halbleiter (172) 172
nanofabrication (168) 168
zno (164) 164
optics (163) 163
transmission electron microscopy (159) 159
physics (157) 157
transistors (157) 157
emission (155) 155
bandlücke (154) 154
performance (153) 153
excitons (152) 152
materials science, coatings & films (152) 152
deposition (145) 145
spectroscopy (145) 145
algan/gan (138) 138
crystals (136) 136
luminescence (135) 135
structure (134) 134
hemt (133) 133
solar cells (131) 131
fabrication (130) 130
wide bandgap semiconductors (130) 130
cadmium compounds (129) 129
molecular-beam epitaxy (129) 129
semiconductor heterojunctions (129) 129
aluminum nitride (128) 128
light-emitting-diodes (126) 126
mocvd (126) 126
semiconductor quantum wells (125) 125
electrochemistry (124) 124
voltage (124) 124
electronics (121) 121
layers (120) 120
density functional theory (119) 119
condensed matter (118) 118
defects (117) 117
molecular beam epitaxial growth (116) 116
carrier density (115) 115
schottky diodes (115) 115
doping (112) 112
epitaxy (112) 112
passivation (112) 112
heterostructures (110) 110
semiconductor quantum dots (110) 110
vacancies (109) 109
more...
Library Location Library Location
Library Location Library Location
X
Sort by Item Count (A-Z)
Filter by Count
Engineering & Comp. Sci. - Stacks (26) 26
Collection Dvlpm't (Acquisitions) - Closed Orders (21) 21
UTL at Downsview - May be requested (19) 19
UofT at Scarborough - Stacks (18) 18
Robarts - Stacks (16) 16
UofT at Mississauga - Stacks (15) 15
Online Resources - Online (9) 9
Collection Dvlpm't (Acquisitions) - Vendor file (8) 8
Gerstein Science - Stacks (8) 8
Faculty of Information - Stacks (5) 5
Astronomy & Astrophysics - Ask at library (2) 2
Engineering & Comp. Sci. - May be requested in 6-10 wks (2) 2
Law (Bora Laskin) - Stacks (2) 2
OISE - Stacks (2) 2
St. Michael's College (John M. Kelly) - 2nd Floor (2) 2
Trinity College (John W Graham) - Stacks (2) 2
Business (Joseph L Rotman) - Stacks (1) 1
Criminology - Stacks (1) 1
Indust. Rel's & Hum. Resources (Newman) - Library use only (1) 1
Knox College (Caven) - Stacks (1) 1
OISE - Reference (1) 1
UofT at Mississauga - Missing (1) 1
UofT at Scarborough - Withdrawn (1) 1
Victoria University E.J. Pratt - Stacks (1) 1
more...
Language Language
Language Language
X
Sort by Item Count (A-Z)
Filter by Count
English (4642) 4642
Japanese (27) 27
Spanish (8) 8
Chinese (5) 5
French (3) 3
German (2) 2
Portuguese (2) 2
Arabic (1) 1
Bengali (1) 1
Russian (1) 1
more...
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


1. Full Text Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
by Roccaforte, Fabrizio and Fiorenza, Patrick and Greco, Giuseppe and Lo Nigro, Raffaella and Giannazzo, Filippo and Iucolano, Ferdinando and Saggio, Mario
Microelectronic Engineering, ISSN 0167-9317, 02/2018, Volume 187-188, pp. 66 - 77
Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium nitride (GaN) are nowadays recognized as outstanding materials for the... 
MOSFET | Power electronics | Wide band gap semiconductors | SiC | GaN | HEMT | PHYSICS, APPLIED | ELECTRON-MOBILITY | 4H-SIC MOSFETS | CHANNEL MOBILITY | NANOSCIENCE & NANOTECHNOLOGY | THRESHOLD-VOLTAGE INSTABILITY | FIELD-EFFECT TRANSISTORS | OHMIC CONTACTS | ENGINEERING, ELECTRICAL & ELECTRONIC | P-TYPE-GAN | ALGAN/GAN HEMTS | PIEZOELECTRIC POLARIZATION | CARRIER TRANSPORT | OPTICS | Nitrides | Silicon carbide | Semiconductors | Gallium nitrate | Forecasts and trends | Energy efficiency | Liquors | Dielectrics | Transistors | Energy management systems
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
2. Full Text Ultrafast Laser Ablation and Deposition of Wide Band Gap Semiconductors
by Sanz, Mikel and López-Arias, Marien and Marco, José F and de Nalda, Rebeca and Amoruso, Salvatore and Ausanio, Giovanni and Lettieri, Stefano and Bruzzese, Riccardo and Wang, Xuan and Castillejo, Marta
The Journal of Physical Chemistry C, ISSN 1932-7447, 03/2011, Volume 115, Issue 8, pp. 3203 - 3211
Isolated nanoparticles of the wide band gap II−VI semiconductors CdS and ZnS were produced by ultrafast pulsed laser deposition using pulses of ≈300 fs at two... 
C: Nanops and Nanostructures | CADMIUM-SULFIDE | MATERIALS SCIENCE, MULTIDISCIPLINARY | HIGH-TEMPERATURE | PULSED-LASER | OPTICAL-PROPERTIES | CHEMISTRY, PHYSICAL | ZNS FILMS | NANOSCIENCE & NANOTECHNOLOGY | CDS THIN-FILMS | ZINC-SULFIDE NANOCRYSTALLITES | TIO2 FILMS | NANOPARTICLES | FEMTOSECOND
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
3. Full Text Wide band gap semiconductor technology: State-of-the-art
by Shur, Michael
Solid State Electronics, ISSN 0038-1101, 05/2019, Volume 155, pp. 65 - 75
Applications of the wide band gap (WBG) semiconductors, such as , , and , range from lighting and ultraviolet (UV) technology to high power, radiation hard,... 
Substrate | Nitrides | Diamond | Terahertz | Ultraviolet | Power | Wide band gap | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MICROWAVE | FIELD | ENGINEERING, ELECTRICAL & ELECTRONIC | GALLIUM NITRIDE | ELECTRON-TRANSPORT | Drug resistance in microorganisms | Quantum wells | Radiation | Crystals | Light-emitting diodes | Structure | Electric fields | Complementary metal oxide semiconductors | Electric properties
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
4. Full Text Interactions between graphene oxide and wide band gap semiconductors
by Kawa, M and Podborska, A and Szaciłowski, K
Journal of Physics: Conference Series, ISSN 1742-6588, 10/2016, Volume 745, Issue 3, p. 32102
Conference Proceeding
Details down arrow
Digital rights down arrow
loading Loading Rights
5. Full Text New Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap Semiconductors
by Shih, Cheng Wei and Chin, Albert
ACS Applied Materials & Interfaces, ISSN 1944-8244, 08/2016, Volume 8, Issue 30, pp. 19187 - 19191
At an ultrathin 5 nm, we report a new high-mobility tin oxide (SnO2) metal-oxide-semiconductor field-effect transistor (MOSFET) exhibiting extremely high... 
field-effect mobility | wide energy band gap | SnO | high temperature | transistor | ROOM-TEMPERATURE | ELECTRON-MOBILITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | GATE | MODEL | INDUCED DRAIN LEAKAGE | INVERSION | OXIDE-SEMICONDUCTOR | MOSFETS | LAYERS | SnO2 | SCATTERING
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
6. Electromagnetic band gap structures in antenna engineering
by Yang, Fan, 1975 and Rahmat-Samii, Yahya and Books24x7, Inc
2009, The Cambridge RF and microwave engineering series, ISBN 052188991X, Volume 9780521889919, xiii, 266
This comprehensive, applications-oriented survey of Electromagnetic Band Gap (EBG) engineering explains the theory, analysis, and design of EBG structures. It... 
Wide gap semiconductors | Design and construction | Antennas (Electronics) | Electronics & communications engineering
Book
Details down arrow
7. The Role of Atmospheric Elements in the Wide Band-Gap Semiconductors
by Jakiela, R
ACTA PHYSICA POLONICA A, ISSN 0587-4246, 12/2019, Volume 136, Issue 6, pp. 916 - 939
The paper addresses the role of ambient elements (H, C, N and O) in the wide-bandgap semiconductor compounds. Their prevalence in the atmosphere imposes... 
atmospheric elements | NITROGEN ION-IMPLANTATION | ELECTRICAL CHARACTERIZATION | HYDROGEN INCORPORATION | CHEMICAL-VAPOR-DEPOSITION | PHYSICS, MULTIDISCIPLINARY | ZNO THIN-FILMS | OPTICAL-PROPERTIES | wide bang-gap semiconductors | MG-DOPED GAN | SILICON-CARBIDE | GALLIUM NITRIDE | SIMS | IMPURITY INCORPORATION
Journal Article
Details down arrow
8. Full Text Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor
by Shin, Ha-Chul and Jang, Yamujin and Kim, Tae-Hoon and Lee, Jun-Hae and Oh, Dong-Hwa and Ahn, Sung Joon and Lee, Jae Hyun and Moon, Youngkwon and Park, Ji-Hoon and Yoo, Sung Jong and Park, Chong-Yun and Whang, Dongmok and Yang, Cheol-Woong and Ahn, Joung Real
Journal of the American Chemical Society, ISSN 0002-7863, 1900, Volume 137, Issue 21, pp. 6897 - 6905
Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D... 
AUGMENTED-WAVE METHOD | MONOLAYER GRAPHENE | GERMANIUM | CHEMICAL-VAPOR-DEPOSITION | HETEROSTRUCTURES | ATOMIC LAYERS | HIGH-QUALITY | CHEMISTRY, MULTIDISCIPLINARY | FIELD-EFFECT TRANSISTORS | ELECTRONICS | INITIO MOLECULAR-DYNAMICS | Boron nitride | Chemical properties | Hybridization | Research | Graphene
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
9. Full Text Calculation of semiconductor band gaps with the M06-L density functional
by Zhao, Yan and Truhlar, Donald G
Journal of Chemical Physics, ISSN 0021-9606, 02/2009, Volume 130, Issue 7, pp. 074103 - 074103-3
The performance of the M06-L density functional has been tested for band gaps in seven semiconductors plus diamond and MgO. Comparison with the local spin... 
gallium arsenide | ENERGY | energy gap | THERMOCHEMISTRY | indium compounds | COMPLEXES | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | VALIDATION | germanium | NONCOVALENT INTERACTIONS | elemental semiconductors | diamond | silicon | II-VI semiconductors | silicon compounds | KINETICS | density functional theory | CHEMISTRY | magnesium compounds | zinc compounds | wide band gap semiconductors | METATHESIS | CATALYSTS | III-V semiconductors
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
10. Full Text Photosensitization and photocurrent switching effects in wide band gap semiconductors: CuI and TiO2 functionalized with iron and nickel complexes: from semiconductors to logic devices
by Wojtyła, Szymon and Wojtyła, Szymon and Baran, Tomasz and Baran, Tomasz
Journal of Inorganic and Organometallic Polymers and Materials, ISSN 1574-1443, 3/2017, Volume 27, Issue 2, pp. 436 - 445
Materials obtained by immobilization of nickel and iron complexes on the surface of n-type titanium dioxide and p-type copper iodide have interesting... 
Polymer Sciences | Metal complex photosensitizers | Chemistry | Optoelectronics | Copper iodide | Semiconducting materials | Inorganic Chemistry | Titanium dioxide | Organic Chemistry | OXIDATION | POLYMER SCIENCE | Metal complex | MECHANISMS | photosensitizers | DYE | NANOPARTICLES | REDUCTION | SENSITIZATION | OPTOELECTRONIC SWITCHES | SURFACE | HYDROGEN-PRODUCTION | NANOCOMPOSITE
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
11. Physics of semiconductors
: 28th International Conference on the Physics of Semiconductors : ICPS 2006 : Vienna, Austria, 24-28 July 2006
by Jantsch, W and Schäffler, Friedrich and American Institute of Physics
2007, Volume 893.
Semiconductors
Conference Proceeding
Details down arrow
12. Physical failure analysis methods for wide band gap semiconductor devices
by Graff, Andreas and Simon-Najasek, Michel and Poppitz, David and Altmann, Frank
IEEE International Reliability Physics Symposium Proceedings, ISSN 1541-7026, 05/2018, Volume 2018-, pp. 3B.21 - 3B.28
wide bandgap devices | Electron microscopy | failure analysis | semiconductor device reliability
Conference Proceeding
Details down arrow
13. Full Text Heat-resistant Microporous Ag die-attach structure for wide band-gap power semiconductors
by Noh, Seungjun and Zhang, Hao and Suganuma, Katsuaki
Materials, ISSN 1996-1944, 12/2018, Volume 11, Issue 12, p. 2531
In this work, efforts were made to prepare a thermostable die-attach structure which includes stable sintered microporous Ag and multi-layer surface... 
Die attachment | Wide band-gap semiconductor | Sinter joining | wide band-gap semiconductor | sinter joining | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | die attachment | HIGH-TEMPERATURE | RELIABILITY
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
14. Full Text Wide Band Gap Semiconductor Technology for Energy Efficiency
by Marlino, Laura and Muth, John and Justice, Nick and Ivester, Robert and Agarwal, Anant and Gradzki, Pawel and Sung, Woong Je
Materials Science Forum, ISSN 0255-5476, 05/2016, Volume 858, pp. 797 - 802
The attributes and benefits of wide-bandgap (WBG) semiconductors are rapidly becoming known, as their use in power electronics applications continues to gain... 
Cost of SiC | Fabless foundry | Renewable energy | GaN | PowerAmerica | SiC | Workforce development | Wide band gap | Costs | Acceptance | Government agencies | Silicon carbide | Semiconductors | Electronics | Markets | Devices
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
15. Full Text Recent knowledge of strength and dislocation mobility in wide band-gap semiconductors
by Yonenaga, I and Ohno, Y and Taishi, T and Tokumoto, Y
Physica B: Physics of Condensed Matter, ISSN 0921-4526, 12/2009, Volume 404, Issue 23-24, pp. 4999 - 5001
The mechanical strengths and dislocation activities in wide band-gap semiconductors SiC, AlN, GaN, ZnO and ZnSe at elevated temperatures are summarized. From... 
Dislocation mobility | Mechanical stability | Wide band-gap semiconductors | PHYSICS, CONDENSED MATTER | TEMPERATURE | YIELD | III-V COMPOUNDS | HARDNESS | DEFORMATION | Semiconductors | Hardness | Activation energy
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
16. Full Text Theoretical limit estimation of lateral wide band-gap semiconductor power-switching device
by Saito, Wataru and Omura, Ichiro and Ogura, Tsuneo and Ohashi, Hiromichi
Solid State Electronics, ISSN 0038-1101, 2004, Volume 48, Issue 9, pp. 1555 - 1562
The theoretical limit of a lateral wide band-gap semiconductor (WBS) power device was estimated for SiC, GaN and diamond. The lateral WBS device realizes... 
Power device | Diamond | Lateral FET | GaN | Wide band-gap semiconductor | wide band-gap semiconductor | PHYSICS, CONDENSED MATTER | diamond | PHYSICS, APPLIED | FIELD-EFFECT-TRANSISTOR | HEMT | lateral FET | power device | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
17. Full Text A generalized solid-state nudged elastic band method
by Sheppard, Daniel and Xiao, Penghao and Chemelewski, William and Johnson, Duane D and Henkelman, Graeme
Journal of Chemical Physics, ISSN 0021-9606, 02/2012, Volume 136, Issue 7, pp. 074103 - 074103-8
A generalized solid-state nudged elastic band (G-SSNEB) method is presented for determining reaction pathways of solid-solid transformations involving both... 
elasticity | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | OMEGA-MARTENSITIC-TRANSFORMATION | solid-state phase transformations | cadmium compounds | TITANIUM | nucleation | II-VI semiconductors | MINIMUM ENERGY PATHS | density functional theory | crystal structure | SADDLE-POINTS | DYNAMICS | deformation | wide band gap semiconductors
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
18. Full Text Eu3+-Doped Wide Band Gap Zn2SnO4 Semiconductor Nanoparticles: Structure and Luminescence
by Dimitrievska, Mirjana and Ivetić, Tamara B and Litvinchuk, Alexander P and Fairbrother, Andrew and Miljević, Bojan B and Štrbac, Goran R and Pérez Rodríguez, Alejandro and Lukić-Petrović, Svetlana R and National Renewable Energy Lab. (NREL), Golden, CO (United States)
The Journal of Physical Chemistry C, ISSN 1932-7447, 08/2016, Volume 120, Issue 33, pp. 18887 - 18894
Nanocrystalline Zn2SnO4 powders doped with Eu3+ ions were synthesized via a mechanochemical solid-state reaction method followed by postannealing in air at... 
EU3 | STATES | PHOTOLUMINESCENCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOCRYSTALS | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CRYSTAL | BULK | RAMAN-SCATTERING | PHOSPHORS | BILBAO CRYSTALLOGRAPHIC SERVER | OXIDES | doping | INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY | nanoparticles | analysis
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
19. Full Text Quasiparticle Self‐Consistent GW Study of (Ga1−xAlx)2O3 Alloys in Monoclinic and Corundum Structures
by Ratnaparkhe, Amol and Lambrecht, Walter R. L
physica status solidi (b), ISSN 0370-1972, 01/2020, Volume 257, Issue 1, p. n/a
The relative stability and energy of formation of monoclinic and corundum structures, which are, respectively, the lowest energy phases of Ga2O3 and Al2O3, are... 
alloys | Ga2O3 | wide band gap semiconductors
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights
20. Full Text The effective role of reduced-graphene oxide in visible light photocatalytic activity of wide band gap SrTiO3 semiconductor
by Ahmadi, M and Seyed Dorraji, M.S and Rasoulifard, M.H and Amani-Ghadim, A.R
Separation and Purification Technology, ISSN 1383-5866, 12/2019, Volume 228, p. 115771
Strontium titanate (SrTiO ) with wide band gap, is only active under UV light irradiation and not under visible light. On the other hand, occupies about 3–5%... 
Strontium titanate | Photocatalytic activity | Reduced graphene oxide | Mechanism | DYES | RHODAMINE-B | PERFORMANCE | HYDROTHERMAL SYNTHESIS | ENGINEERING, CHEMICAL | NANOPARTICLES | DEGRADATION | NANOTUBES | FABRICATION | WATER
Journal Article
Details down arrow
Digital rights down arrow
loading Loading Rights